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41.
Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition (PLD). Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results. 相似文献
42.
500.8 nmNd∶YAG青光激光器光学薄膜的设计与制备 总被引:5,自引:2,他引:3
从双波长激光运转及和频的机理出发,对LD泵浦Nd∶YAG,LBO腔内和频500.8 nm〖JP2〗青光激光器所使用的光学薄膜进行了设计和制备.在激光反射镜的设计上,为了达到最佳的和频输出,对膜系要求进行了深入分析.采用对谐振腔一端面反射率固定不变并通过对另一腔镜基频光的透射率进行调谐的方法, 在给出合理初始结构后,利用计算机对膜厚进行了优化.并采用双离子束溅射沉积的方法,通过时间监控膜厚法成功制备出青光激光器所使用的全介质激光反射膜, 在室温下实现946 nm和1064 nm双波长连续运转,并通过Ⅰ类临界相位匹配LBO晶体腔内和频在国内首次实现500.8 nm青色激光连续输出.当泵浦注入功率为1.4 W时和频青光最大输出达20 mW. 相似文献
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半个世纪以来,对半导体技术的深入研究和广泛应用推动了电子工业和信息产业的迅速发展。目前半导体技术正向高速度、高集成化方向发展,但这也不可避免地引发了一系列问题,例如电路中能量损耗过大导致集成片发热,如何进一步将电子器件小型化等。人们由此感到半导体器件的能力已基本达到了极限,转而把目光由电子投向了光子,因为光子有着电子所不具备的优势:速度快,彼此间不存在相互作用,一旦实现用光子替代电子传递信息, 相似文献
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为了给光锥与时间延迟积分电荷耦合器件耦合监控装置提供有效的被测运动条纹,分析了传统推扫成像实验装置的不足之处,设计了电子显示目标滚屏运动装置.采用光学相机对印刷条纹静止成像,并用TDI-CCD数字相机对监视器屏幕上的运动条纹动态成像.实验结果表明,该方案解决了高分辨率的鉴别率图样无法在监视器或投影仪上精确显示的困难.与传统的实验室模拟装置相比,该方案提高了鉴别率条纹的运动稳定性,减小了条纹运动速率与TDI-CCD扫描行频间的失配误差,不仅能够对耦合过程实施监控,而且还能用于耦合系统的像质评价. 相似文献
47.
The Newton filtration and d-determination of bifurcation problems related to C~0 contact equivalence
SU Dan & ZHANG Dunmu School of Mathematics Statistics Wuhan University Wuhan China 《中国科学A辑(英文版)》2006,49(5)
In this paper, from the Newton filtration's point of view, we construct the singular Riemannian metric and use the method in singular theory to study the bifurcation problems, and give the sufficient condition of d-determination of bifurcation problems with respect to C0 contact equivalence. The special cases of the main result in this paper are the results of Sun Weizhi and Zou Jiancheng. 相似文献
48.
Previous studies using dideuterium as a solute have demonstrated the importance for orientation of the interaction between the solute molecular quadrupole moment and the average electric field gradient present in liquid crystals. With the aim of learning about additional orientational mechanisms, we have studied the temperature dependence of the 2H-NMR spectra of the liquid crystal 5CB-d19 as the solute in three liquid crystal mixtures: 55 wt % 1132/EBBA, 56·5 wt % 1132/EBBA and 70 wt % 5CB/EBBA. In these mixtures, the contribution from the environment to the average electric field gradient at the 2H nucleus of dideuterium is zero. The spectra of 5CB-d19 in the mixtures 55 wt % 1132/EBBA and 56·5 wt % 1132/EBBA are equivalent, but are different from those in 70 wt % 5CB/EBBA. The spectra of 5CB in 55 wt % 1132/EBBA and 70 wt % 5CB/EBBA are analysed using two different models for the short range potential, and param eters of the models are used to compare the potentials in the different mixtures. For a given spectral splitting of the chain C1 deuteron, the reduced short range potential is the same in all three mixtures studied. The spectral differences observed are a consequence of different nematic-isotropic phase transition temperatures combined with the effect of trans/gauche-isomerization in the hydrocarbon chain. 相似文献
49.
G. Michałek B.R. Bułka 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,28(1):121-128
The currents and their fluctuations in two capacitively coupled single electron transistors are determined in the limit of
sequential tunnelling. Our considerations are restricted to the case when the islands (dots) of the transistors are atomic-sized,
which means each of them has only one single electronic level available for the tunnelling processes. The Coulomb interactions
of accumulated charges on the both single electron transistors lead to the effect of the negative differential resistance.
An enhancement of the current shot-noise was also found. Spectral decomposition analysis indicated the two main contributions
to the shot-noise: low- and high-frequency fluctuations. It was found that the low frequency fluctuations (polarization noise)
are responsible for a strong enhancement of the current noise.
Received 9 October 2001 / Received in final form 8 March 2002 Published online 9 July 2002 相似文献
50.